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Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping
Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping
2020
Rami Mantach
Philippe Vennéguès
Jesús Zuñiga Pérez
Philippe De Mierry
Marc Portail
Guy Feuillet
Keywords:
Trapping
Dislocation
Materials science
Silicon on insulator
Optoelectronics
Correction
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