Improving thermal performance of a UTC photodetector in the IMOS platform

Recently a uni-traveling carrier photodetector (UTC-PD) with a 3 dB bandwidth beyond 67 GHz was presented [1]. The device shows good performance up to 3 mA of photocurrent but experiences thermal failure (see Fig. 1a) at higher currents due to the poor heat extraction in membrane-type devices. Improvements to the thermal design are proposed that promise to double the possible photocurrent before thermal failure, which makes the performance comparable with state-of-the-art SOI UTC-PDs [2].