Ultra-thin Hf 0.5 Zr 0.5 O 2 Ferroelectric Tunnel Junction with High Current Density

Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf 0.5 Zr 0.5 O 2 (HZO) is investigated. The high current density up to 100 A/cm2 is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing. The insertion of a thin Al 2 O 3 interfacial layer is found critical to alter the switching polarity and increase current density.