Experimental evidence of resonant field emission from ultrathin amorphous diamond thin film

Resonant field electron emission was observed from amorphous diamond thin film. An ultrathin, i.e. ∼2 nm, amorphous diamond thin film highly localize on a single sharp Si tip apex was used for the experiments. Tip specimens were fabricated by state-of-the-art microfabrication techniques, including high-resolution electron beam lithography, plasma dry etching and local amorphous diamond deposition on the tip apex. It was observed from current-field (I-E) characteristics that in the applied macro-field of typically 11-12 MV m -1 there are reversible and relatively strong current peaks, in contrast to the normal current instability phenomenon. The results confirm the effect of resonant tunnelling from amorphous diamond thin films.