A New Empirical Large Signal Model of 4H-SiC MESFETs for the Nonlinear Analysis

A new comprehensive empirical large signal model for 4H-SiC MESFETs is proposed.An enhanced drain current model,along with an improved charge conservation capacitance model,is presented by the improvement of the channel length modulation and the hyperbolic tangent function coefficient based on the Materka model.The Levenberg-Marquardt method is used to optimize the parameter extraction.A comparison of simulation results with experimental data is made,and good agreements of I-V curves,Pout(output power),PAE (power added efficiency),and gain at the bias of VDS＝20V,IDS=80mA as well as the operational frequency of 1.8GHz are obtained.