Increasing the Charge Stability of Gate Dielectric Films of MIS Structures by Doping Them with Phosphorus

It is shown that thermal doping of SiO2 film with phosphorus, which leads to the formation of a thin film of phosphosilicate glass on its surface, makes it possible to increase the charge stability of the gate dielectric of MIS structures. It is established that the presence of a film of phosphosilicate glass makes it possible to significantly reduce local injection currents flowing in defective areas owing to the capture of electrons by traps in a film of glass, leading to an increase in the energy barrier. As a result, the number of structures that break down at low values of the charge injected into the dielectric under high-field influences significantly decreases. It is shown that, in a film of phosphosilicate glass, the heating of injected electrons decreases, which also leads to an increase in the charge stability of the gate dielectric under high-field injection effects.