Electrical Properties of HfO2/InAs MOS Capacitors

Alternative III-V channel materials are currently under investigation to increase the energy efficiency of microprocessor technology [1]. In this work, the first investigation of Au/Ti/HfO2/InAs metal-oxide-semiconductor (MOS) capacitors is reported. The HfO2 is deposited by atomic layer deposition (ALD) and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The effects of surface treatment, deposition temperature, post-deposition anneal, and film thickness on breakdown field, leakage current, capacitance, and frequency dispersion are studied with the aim of producing HfO2-InAs interfaces suitable for use in InAs-channel MOSFETs.