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Characterization of Al 2 O 3 /AlGaN/GaN HEMTs fabricated on free-standing GaN substrates
Characterization of Al 2 O 3 /AlGaN/GaN HEMTs fabricated on free-standing GaN substrates
2019
Shota Kaneki
Yuji Ando
Tamotsu Hashizume
Keywords:
Materials science
Optoelectronics
algan gan
characterization
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