Comparative study of hybrid perovskite phototransistors based on CVD-grown and spin-coated MAPbI3

Abstract In this study, the properties of methyl ammonium lead iodide (MAPbI3) hybrid organic-inorganic perovskite films grown by spin-coating and chemical vapor deposition (CVD) method were examined and compared. Atomic force microscopy analyses indicate that the CVD-grown MAPbI3 films exhibit a smoother surface compared to their spin-coated counterparts. Phototransistors incorporating CVD-grown MAPbI3 as the active layer exhibit superior electrical characteristics, with field effect mobility values higher by approximately one order of magnitude. The degradation of phototransistors under negative bias stress (NBS) and positive bias stress (PBS) in the presence of illumination was evaluated and discussed based on the charge trapping mechanism.