Monte Carlo Simulation of Semiconductor Nanostructure Growth

Abstract Monte Carlo simulation results of silicon nanocluster formation in silicon dioxide layers and Si and GaAs nanowhiskers growth are presented in this chapter. The influence of silicon monoxide on aggregation of silicon into clusters during high-temperature suboxide SiO x layer annealing was analyzed. The process of axial Si-Ge heterostructure formation during nanowhisker growth was studied. The dependence of GaAs nanowhisker morphology on growth conditions was demonstrated.