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Standalone High-Quality GaN Substrates grown on ScAlMgO 4 Substrate using SiO 2 -Wide-Mask-Patterns by HVPE
Standalone High-Quality GaN Substrates grown on ScAlMgO 4 Substrate using SiO 2 -Wide-Mask-Patterns by HVPE
2020
Takushi Kaneko
Shogo Shingu
Koichiro Yuki
Ryo Inomoto
Narihito Okada
Kazuyuki Tadatomo
Hiroyuki Iechi
Gyo Yamamoto
Hiroshi Ohno
Akihiko Ishibashi
Tsuguo Fukuda
Keywords:
substrate
Materials science
quality
Optoelectronics
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