Deposition of a-Ge:H in a Remote Plasma System

The remote plasma deposition process was studied by optical emission spectroscopy using Ne and N 2 to detect He-metastables. a- Ge:H was prepared and its optoelectronic and structural properties were characterized. AM 1.5 photoconductivities around 10 −6 (Ωcm) −1 were obtained in intrinsic material with the Fermi level position lying near midgap. However, even in the best film the defect density is higher than 10 17 cm −3 .