Microscopy of semiconducting materials : proceedings of the 15th conference, 2-5 April, 2007, Cambridge, UK

Envisaged contents: The main topic areas are as follows: The characterisation of as-grown semiconductors in both bulk and thin film forms. The study of nanostructures of all types from quantum dots, wires, etc to nanotubes. The investigation of lattice defect and impurity behaviour in semiconducting materials. The study of the effects of semiconductor processing treatments - oxidation, nitridation, ion implantation, annealing, silicidation, etc. The assessment of finished electronic devices, including studies of the influence of structural defects upon their behaviour and important new design features such as high/low k dielectrics, etc. The state of the art in analytical technique development from advances in FEGTEM nanoanalysis to exploitation of FIB milling for specimen preparation. Special conference sessions focused attention on recent advances in a number of areas of particular current interest, for example: Developments in the use of high resolution imaging and analytical transmission electron microscopy - studies of bulk material, layers and interfaces. Advances in FIB milling and nanofabrication. The nature of epitaxial layers, superlattices and quantum well, wire and dot structures - strain relaxation, defect introduction, morphological distortion, self-organisation, luminescence. Wide bandgap semiconductors, especially III-nitrides. The structures of dislocations and defect boundaries in semiconductors. Advances in SiGe/Si for device structures such as HBTs, MOSFETs, terahertz emitters, etc. Metal-semiconductor contacts and silicides. The effects of processing treatments using both conventional and transient techniques. The exploitation of advanced scanning techniques -SEM-EBIC, SEM-CL, etc -STM, AFM, SCM, BEEM, etc