Low ON-Resistance GaN Schottky Barrier Diode With High V-ON Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology

Jingnan Gao,Yufeng Jin,Bing Xie,Cheng P. Wen,Yilong Hao,Bo Shen,Maojun Wang

Low ON-Resistance GaN Schottky Barrier Diode With High V-ON Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology

2018

Jingnan Gao
Yufeng Jin
Bing Xie
Cheng P. Wen
Yilong Hao
Bo Shen
Maojun Wang

National Key Research and Development Program of China [2017YFB0403000, 2016YFB0400200]; National Natural Science Foundation of China [11634002, 61774002]

Keywords:

Chemical vapor deposition
Agroforestry
Anode
Schottky diode
Voltage
Biology
Optoelectronics

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