High-Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFET (AB-DTMOS) with Large Body Effect at Low Supply Voltage

A high-performance accumulated back-interface dynamic threshold silicon-on-insulator metal-oxide-semiconductor field effect transistor (AB-DTMOS) with a large body effect at low supply voltage (Vdd< 0.5 V) is proposed for low-power applications. In AB-DTMOS, the back interface between the non-doped thin SOI and the buried oxide is accumulated by a large negative substrate bias, and the gate electrode is connected to this electrically induced body. AB-DTMOS realizes an ideal low/ultrahigh step channel profile electrically and achieves the maximum body effect. At fixed Vth, the body effect factor (γ) of AB-DTMOS is twice as large as that of the conventional uniformly doped channel DTMOS, because the channel depletion layer width of AB-DTMOS is half that of the conventional DTMOS. Experimental results show a steep subthreshold slope, a high current drive due to a large Vth shift, and a suppressed short channel effect.