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Investigation of Retention Characteristics Caused by Charge Loss for Charge Trap NAND Flash Memory
Investigation of Retention Characteristics Caused by Charge Loss for Charge Trap NAND Flash Memory
2017
Seung Hyun Kim
Sang-Ho Lee
Sang-Ku Park
Young-Min Kim
Seongjae Cho
Byung-Gook Park
Keywords:
Electronic engineering
NAND gate
Computer science
Flash memory
charge loss
nand flash memory
Optoelectronics
Correction
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