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Acemap > Paper > DX-center-related persistent photoconductivity in LPE AlxGa1−xAs:Te (0.3<x<0.7) layers grown on SI GaAs

DX-center-related persistent photoconductivity in LPE AlxGa1−xAs:Te (0.3<x<0.7) layers grown on SI GaAs

1989 
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