Pulsed laser deposition of high quality ITO thin films

Abstract Thin ITO films are deposited onto glass substrates by excimer pulsed laser ablation of a bulk ITO target (90% In 2 O 3 , 10% SnO 2 ). The rotating target is irradiated in low pressure oxygen atmosphere by a KrF excimer laser emitting at 248 nm with a pulse frequency of 5 Hz at typical energy density of 5 J/cm 2 per pulse. The geometry of the deposition chamber is the classical one for pulsed laser deposition (PLD) of highT c superconductors. The temperature of the substrate and the oxygen atmosphere pressure in the chamber are varied. The influence of these parameters on the electrical resistance and the optical properties (transmission and reflectivity) of the ITO films is studied. Optimal preparation conditions are determined with regards to these properties. Oxygen contents of the as-produced films and of the target are also evaluated by Auger electron spectroscopy, whilst crystallinity of the films is examined by X-ray diffraction.