An investigation of the time dependence of current degradation in MOS devices

A perturbation technique is used to solve the time-dependent transport equations, giving an accurate picture of the time dependence of hot-carrier-induced degradation in submicrometer MOS devices. The growth of the spatial distribution of both the interface-generated traps and the oxide-trapped charges are incorporated in a two-dimensional model using the effective electron temperature calculations. The calculations and the measurements show a self-limiting behavior of the degradation process. >