Oxygen vacancy induced electronic structure variation in the La0.2Sr0.8MnO3 thin film

Oxygen vacancy in different oxide systems shows up as a crucial parameter in modulation of the emerging application-oriented functionalities. A systematic exploration on the relation between oxygen vacancy and electronic structure of the La0.2Sr0.8MnO3 (LSMO) thin film has been carried out through sequential surface treatments followed by a series of wide scan XPS, O 1s XPS, O-K edge XAS, Mn-L edge XAS and work function measurements. Experimental results demonstrate mutual corroborative certifying evidences in between the different photoemission spectral measurements on the evolution and influence of the oxygen vacancy. Spectral characteristic features observed in the work are applicable using as justification fingerprint for the existence, modulation, or elimination of the oxygen vacancy in similar perovskite type oxide systems.Oxygen vacancy in different oxide systems shows up as a crucial parameter in modulation of the emerging application-oriented functionalities. A systematic exploration on the relation between oxygen vacancy and electronic structure of the La0.2Sr0.8MnO3 (LSMO) thin film has been carried out through sequential surface treatments followed by a series of wide scan XPS, O 1s XPS, O-K edge XAS, Mn-L edge XAS and work function measurements. Experimental results demonstrate mutual corroborative certifying evidences in between the different photoemission spectral measurements on the evolution and influence of the oxygen vacancy. Spectral characteristic features observed in the work are applicable using as justification fingerprint for the existence, modulation, or elimination of the oxygen vacancy in similar perovskite type oxide systems.