15.1 A Novel Local Interconnect Technology for High-Performance Logic LSIs with Embe M

A novel local interconnectkontact technology with a selfaligned Metal-Stacked sourceQrain structure (MSD) is proposed. This technology provides a self-aligned contact technology for narrow source/drain opening of 0.2pm width with low parasitic resistance and low junction leakage current level. Excellent cell ch,aracteristics with 6.82pm2 full-CMOS SRAM have been achieved.