Design of GaAs-based pseudomorphic HEMTs by 2D device simulations

In this paper, AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMT's) was optimized by means of 2D device simulation. The commercial 2D device simulator Taurus-MEDICI is used to study the effect of varying barrier or supply doping concentration, N/sub Dsupply/ on the gate characteristics and current-gain cutoff frequency (f/sub T/) of the PHEMT. We show that values of f/sub T/ in excess of 100GHz can be obtained by optimizing the supply doping concentration.