EFFECT OF MAGNETIC FIELD ON THE PERFECTION OF MCZ SILICON

n-type and p-type MCZ silicon grown under different magnetic field strengths and different pulling rates compared with the CZ silicon were investigated by means of X-ray topography, micro-region infrared absorption, infrared microscopy, optical microscopy and spreading resistance, etc. The experimental results show that the MCZ method can provide high quality silicon crystals with a low oxygen concentration, uniform distribution of dopant and good thermal stability, leading to low thermal donor generation.