Method for reducing sheet resistance of graphene thin film

The invention relates to a method for reducing sheet resistance of a graphene thin film, comprising the following step of soaking the graphene thin film and a substrate in a solution with an electron or hole donation capability for a certain time, wherein the solution in the step is one or mixed solution with an electron donation capability of low-valence solutions of heavy metal inorganic acid, organic alcohol and organic amine; or the solution in the step is one or mixed solution with a hole donation capability of a nonmetal inorganic acid solution and an organic alkane solution. The invention has the beneficial effects that: after the graphene thin film arranged on the substrate is soaked in a solution with the electron donation capability, the solution captures holes in the graphene thin film, thus the consistency of electrons in the graphene thin film is increased, and the sheet resistance of the graphene thin film is reduced.