Capacitance of back-gated nanowires in various dielectric embeddings
2014
The effect of dielectric embedding on the capacitance of back-gated nanowires can be accurately captured as an effective dielectric constant that depends solely on the difference between the nanowire-gate distance and the dielectric thickness. When used for sensing purposes this property provides the maximum sensitivity within a range of two diameters around the center of the nanowire.
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