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Contact properties of field-effect transistors based on InAs nanowire thinner than 16 nm
Contact properties of field-effect transistors based on InAs nanowire thinner than 16 nm
2015
Tuanwei Shi
Mengqi Fu
Dong Pan
Yao Guo
Jianhua Zhao
Qing Chen
Keywords:
Nanotechnology
Field-effect transistor
Nanowire
Materials science
Optoelectronics
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