Compensation method for etching the substrate

A method for the substrate processing chamber of a plasma etching compensation, wherein the substrate is placed on the base of the chamber in etching process, when receiving the warning signal, the respective chambers wherein the stopping of the substrate etching process to be performed after a period of waiting time compensation for etching, characterized in that the method comprises: during the waiting time, to stop the electrostatic clamp electrostatic attraction on the disc, maintaining the electrostatic chuck the cooling gas in the gas passage disk. The method of etching the substrate of the present invention provides compensation of a defect does not occur, the yield is improved.