Defect evolution in ultralow energy, high dose helium implants of silicon performed at elevated temperatures

There is a growing interest in using high dose helium implants to alter point defect populations in silicon. Previous reports have shown that the interaction between helium and vacancies leads to the formation of cavities for medium energy (e.g., 20–100 keV) implants. However, the role of certain factors, such as the proximity of the surface, the damage created by the implant, and the effect of the implant temperature, is not well understood for low energy implants. This study explored a new regime of ultralow energy, elevated temperature implants in order to offer an insight into the effect of these parameters. Transmission electron microscopy (TEM) showed that cavity formation was avoided for 0.5 keV, 450 °C implants up to a dose of 8 × 1016 cm−2. However, extended defects in the form of {311} ribbon-like defects and stacking faults were observed. Quantitative TEM showed that the number of interstitials in these defects was less than 0.2% of the implant dose. In addition, thermal helium desorption spect...