Comparative Study of High-k Dielectric on MoS2 Deposited by Plasma Enhanced ALD

High-k dielectrics of Al 2 O 3 , HfO 2 and ZrO 2 have been directly deposited on MoS 2 through plasma enhanced atomic layer deposition (PEALD). Among them, PEALD-ZrO 2 /MoS 2 has shown the highest interfacial quality with high dielectric constant and sharp interface, characterized by CV, XPS and TEM measurements. Dual gate CVD-grown MoS 2 MOSFETs using PEALD-ZrO 2 as a top-gate dielectric has also been demonstrated.