A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology

This paper presents a four-way combined G-band power amplifier (PA) using a 130-nm SiGe BiCMOS technology. A 185-GHz three-stage single-ended PA based on cascode topology with two driver stages and a power stage is designed. To combine output power of four single-ended PAs, a low-loss four-way reactive power combiner is designed. The developed PA shows a saturated output power of 18.1 dBm with peak gain of 25.9 dB and PAE of 3.5 % at 185 GHz. In addition, the PA provides a 3 dB and 6 dB bandwidth of 27 GHz and 42 GHz, respectively. To the best of our knowledge, the measured power reported in this paper is the highest for SiGe BiCMOS PAs in G-band.