Properties of epitaxial (Al x Ga 1 − x As) 1 − y C y alloys grown by MOCVD autoepitaxy

The growth of epitaxial Al x Ga1 − x As:C alloys by metal-organic chemical vapor deposition (MOCVD) at low temperatures results in the formation of quaternary (Al x Ga1 − x As)1 − y C y alloys, in which carbon atoms can be concentrated at lattice defects in the epitaxial alloy with the formation of impurity nanoclusters.