High-Power InP Photodetectors

We report on the performance and reliability of hermetic photodetectors modules based on flip-chipped Modified Uni-Traveling Carrier (MUTC) PDs with active areas of 40 pm, 28 pm and 20 pm diameter. The modules demonstrated a 3-dB bandwidth of up to 14, 26 and 30 GHz. High-saturated RF output power was achieved with output power levels of 25 dBm at 15 GHz, 21 dBm at 25 GHz and 17 dBm at 30 GHz. Ten modules were monitored at 120 mA of photocurrent at 50°C and over 160 hours without any performance degradation or failure.