Tunneling emission from valence band of Si-metal–oxide–semiconductor electron tunneling cathode
1998
A metal–oxide–semiconductor (MOS) electron tunneling cathode using n- and heavily doped p-type Si substrates were fabricated and their characteristics were measured. Two energy peaks in the energy distributions of emitted electrons from the n-type cathode with the gate oxide thickness of 8.5 nm and the p-type cathode with the gate oxide thickness of 8.9 nm were observed. This article discusses the experimental results to make a conduction mechanism clear and shows that a part of electrons tunnel through the oxide barrier from the valence band of Si substrate and are emitted into vacuum in the MOS electron tunneling cathode.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
11
Citations
NaN
KQI