Atomic layer deposition of energy band tunable tin germanium oxide electron transport layer for the SnS-based solar cells with 400 mV open-circuit voltage

Tin germanium oxide, (Sn,Ge)O2, films were prepared using atomic layer deposition and tailored to a SnS absorber layer by incorporating various amounts of germanium into tin oxide to adjust band alignments at the interfaces of SnS/(Sn,Ge)O2 photovoltaic devices. Carrier concentrations of (Sn,Ge)O2 were suppressed from 1020 to 1018 cm−3 with germanium incorporation, with nitrogen doping further reducing carrier concentrations by another order of magnitude. Excellent tunability of both band energy levels and carrier concentrations of (Sn,Ge)O2 allowed optimizing SnS-based solar cells. SnS/(Sn,Ge)O2:N devices were demonstrated, with an open-circuit voltage as high as 400 mV, due to the effective mitigation of interfacial recombination of photogenerated carriers at the SnS/(Sn,Ge)O2:N absorber-buffer heterojunction interface.Tin germanium oxide, (Sn,Ge)O2, films were prepared using atomic layer deposition and tailored to a SnS absorber layer by incorporating various amounts of germanium into tin oxide to adjust band alignments at the interfaces of SnS/(Sn,Ge)O2 photovoltaic devices. Carrier concentrations of (Sn,Ge)O2 were suppressed from 1020 to 1018 cm−3 with germanium incorporation, with nitrogen doping further reducing carrier concentrations by another order of magnitude. Excellent tunability of both band energy levels and carrier concentrations of (Sn,Ge)O2 allowed optimizing SnS-based solar cells. SnS/(Sn,Ge)O2:N devices were demonstrated, with an open-circuit voltage as high as 400 mV, due to the effective mitigation of interfacial recombination of photogenerated carriers at the SnS/(Sn,Ge)O2:N absorber-buffer heterojunction interface.