Extensions of models for transistor failure probability due to neutron fluence. Technical report

Models developed in the Hardening Options for Neutron Effects (HONE) program for predicting transistor failure probability are extended to include probability distributions for the initial current gains and to allow nonzero origins for all random variables concerned. Further, these models are generalized to consider two-transistor combinations. Test cases are calculated to compare the failure probability curves generated by these models with previous results.