Highly reflective AlN-GaN and ZrO/sub 2/-SiO/sub 2/ multilayer reflectors and their applications for InGaN-GaN surface emitting laser structures

We present the design and fabrication of multilayer distributed Bragg reflectors (DBRs) for GaN based VCSELs covering from ultra-violet to blue spectral region. Also, a resonant emission from a photopumped InGaN-GaN vertical cavity structure with a cavity length of 1.9 /spl mu/m is demonstrated.