Electrical and structural properties of p‐n junctions in cw laser annealed silicon

Depth profiles of the electrical quality of ion implanted and cw laser annealed p‐n junctions in silicon are obtained for the first time by secondary ion mass spectroscopy. A comparison with the crystallographic properties of the surface and the junction as observed by Nomarski optical microscopy as well as cross‐sectional and plan view transmission electron microscopy is made. Samples containing slip dislocations show better insulation and a lower reverse bias current across the p‐n junction as comapred to samples with a perfect surface in agreement with current‐voltage characteristics. Small dislocation loops located at the junction are found to degrade the junction quality.