Method of manufacturing a semiconductor device, a semiconductor device
2009
The method of manufacturing a semiconductor device, a seed layer is formed and the groove forming step of forming a groove in the substrate, and a barrier layer forming step of forming a barrier layer over the inner wall surface of at least said groove, a seed layer covering the barrier layer formed comprising a step, and a seed layer melting step of melting by a reflow method the seed layer, the seed layer is made of Cu.
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