A computational study of fundamentals and design considerations for vertical tunneling field-effect transistor

A comprehensive and rigorous computational study at atomic level was performed for various vertical tunneling field-effect transistor (VTFET) structures based on III-V and two-dimensional (2D) materials. The key challenges of VTFETs were found to be induced by device structures and the channel materials' properties. An optimized VTFET structure was proposed to suppress the parasitic tunneling current and improve subthreshold region performance. A drive current ∼421.6μA/μm is obtained based on the structural-optimized MoS 2 -WSe 2 VTFET.