The semiconductor device

This semiconductor device is provided with a first silicon carbide semiconductor layer, a p-type first impurity region that is provided in the first silicon carbide semiconductor layer, and a first ohmic electrode in ohmic contact with the first impurity region. The first ohmic electrode is formed of a silicon alloy containing nitrogen, the average concentration of nitrogen contained in the first ohmic electrode is equal to or more than a half the average concentration of nitrogen in the first impurity region, and the average concentration of a p-type impurity in a first ohmic electrode portion, excluding a portion within a range of 50 nm from the interface between the first ohmic electrode and the first impurity region, is equal to or less than 3.0*1018 cm-3.