Effect of temperature- and composition-dependent deep level energies on electrical compensation: Experiment and model of the Cd{sub 1-x}Zn{sub x}Te system

The effect of temperature and composition dependences of deep level ionization energies in semi-insulating compound semiconductors is investigated and illustrated in the example of the ternary Cd{sub 1-x}Zn{sub x}Te system. Those dependences are determined by the behavior of the band extrema in an absolute energy scale and the actual nature of a particular defect, which controls its relation to the host crystal states. Examples for the interpretation of experimental temperature and composition dependences of critical charge transport parameters are given.