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Acemap > Paper > 二次元半導体素子の第一原理シミュレーション:移動度,I‐V特性および接触抵抗【Powered by NICT】

二次元半導体素子の第一原理シミュレーション:移動度,I‐V特性および接触抵抗【Powered by NICT】

2016 
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