Self-powered room temperature broadband infrared photodetector based on MoSe2/germanium heterojunction with 35 A/W responsivity at 1550 nm

A highly efficient room temperature photodetector with broadband (400 nm–1800 nm) photoresponse based on the MoSe2/Ge heterojunction has been reported here. The fabricated MoSe2/Ge heterojunction exhibits high responsivity up to 24 A/W in the near-infrared wavelength range (750 nm) and 35 A/W in the short wavelength infrared range (1550 nm). The interfacial charge transfer at the Ge-MoSe2 heterojunction enables self-powered photo-detection in fabricated devices with zero bias responsivity values of 250 mA/W (750 nm) and 400 mA/W (1550 nm). Transient photoresponse measurements of the MoSe2/Ge heterojunction under the modulated light reveal that the devices are capable of working up to 20 kHz with a fast rise/fall time of 13.5/1.2 μsec. These results demonstrate the feasibility of achieving a high-performance photodetector derived from the MoSe2/Ge heterojunction for broadband infrared detection.A highly efficient room temperature photodetector with broadband (400 nm–1800 nm) photoresponse based on the MoSe2/Ge heterojunction has been reported here. The fabricated MoSe2/Ge heterojunction exhibits high responsivity up to 24 A/W in the near-infrared wavelength range (750 nm) and 35 A/W in the short wavelength infrared range (1550 nm). The interfacial charge transfer at the Ge-MoSe2 heterojunction enables self-powered photo-detection in fabricated devices with zero bias responsivity values of 250 mA/W (750 nm) and 400 mA/W (1550 nm). Transient photoresponse measurements of the MoSe2/Ge heterojunction under the modulated light reveal that the devices are capable of working up to 20 kHz with a fast rise/fall time of 13.5/1.2 μsec. These results demonstrate the feasibility of achieving a high-performance photodetector derived from the MoSe2/Ge heterojunction for broadband infrared detection.