Experimental and numerical investigations of 13-kV diodes and asymmetric light-triggered thyristors

Diodes and asymmetric thyristors with a blocking capability of 13 kV can be used with great benefit in various applications such as high-voltage direct current transmission, flexible alternate current transmission, or the wide field of pulsed-power applications. We have fabricated first test diodes and direct light-triggered asymmetric thyristors designed for such applications. Characteristic design features of both devices are described and their typical static and dynamical features are presented. In the 13-kV diodes, a recently proposed buried field stop layer was implemented. First test measurements confirmed the predicted improvement of the reverse recovery behavior of a diode provided with such a buried field stop layer. The main challenge in designing the asymmetric thyristor pertained to the integration of a direct light-triggering function, and overvoltage protection