Extension mechanism of antiphase-boundaries in CuPt B-type ordered GaInP2 and (Al,Ga)InP2 epitaxial layers

Abstract We observe the antiphase boundaries (APBs) in the ordered CuPt B-type GaInP 2 and (Al,Ga)InP 2 layers grown on a vicinal GaAs(0 0 1) substrate by means of postgrowth transmission electron microscopy. We conclude that APBs are active sites for nucleation of two-dimensional (2D) islands on the terraces of vicinal surfaces. Growth on these surface is otherwise dominated by step flow growth. The growth (by step flow) and collision of this 2D island with a normal step extend the APBs in a direction inclined to the normal growth direction.