Dislocation-Induced Photoluminescence in Silicon Crystals of Various Impurity Composition
2003
The effect of oxygen on the dislocation-induced photoluminescence (DPL) spectra at 4.2 K is studied in silicon crystals with different impurity compositions subjected to plastic deformation at temperatures above 1000°C. A strong effect of doping impurities on the DPL spectra is observed for concentrations above 1016 cm−3. It is shown that the peculiarities of many DPL spectra in silicon can be explained by assuming that the D1 and D2 lines are associated with edge-type dislocation steps on glide dislocations.
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