Ge-on-Si wavelength division multiplexing components near 4.7 μm

Wavelength division multiplexing components based on Ge-on-Si waveguides are presented for operation near 4.7 μm wavelength. Transmission characteristics of 1 × 1 and 2×2 MZIs (35 dB extinction) and AWGs (25.7 dB cross-talk) are reported.