A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect

A new model to capture the physics of short channel double-gate junctionless transistor (DGJT) has been developed. By solving the 2-D Poisson’s equation, the channel potential solution is obtained for both the physical channel and the dynamic channel extension to the source and drain. This dynamic change in channel boundary in DGJT has a strong impact on the performance of junctionless transistor, especially at reduced channel length. Based on the channel potential solution, a smooth and continuous drain current model is derived from Pao–Sah’s dual integral. This model is valid for all operation modes, including full depletion, partial depletion, and accumulation. Extensive comparison with numerical simulation has been performed to validate model in both the long channel and short channel regimes.