Analysis of Temperature Dependent Effects on I–V Characteristics of Heterostructure Tunnel Field Effect Transistors

This paper provides an analysis of the intrinsic factors influencing the temperature dependence of the $I_{d}-V_{ds}-V_{gs}$ characteristics of heterostructure Tunnel FETs based on GaSb/InAs tunneling junctions. The temperature dependence of energy bandgap, quantum confinement energy-shifts, and fermi-level position are quantified. There is significant cancellation among the various effects, such that the overall $I_{d}-V_{ds}- V_{gs} $ characteristics are expected to have remarkably small temperature dependence, of the order of 10 – 20 mV shift in $V_{gs} $ over the temperature range of 0 – 125 °C. Considerations are also discussed for representative extrinsic effects such as trap-assisted tunneling, which affect many experimental devices to a variable extent.