CuO nanowires-based Radial hetero-junction thin film silicon solar cells with a high open-circuit voltage

In this article, we demonstrated the fabrication of 3D p-type CuO nanowires (NWs)/intrinsic hydrogenated amorphous silicon(i-a-Si:H) Ridial Hetero-juntion Solar Cells(RHSC) for the first time. we also obtained different composition of oxide NWs and different lengths of NWs by controlling the growing time and temperature upon low-cost stainless steel substrates. A highly p-doped a-Si:H thin film was introduced as a passivation layer to establish more depletion and decrease the leakage at hetero-interface. Photovoltaic(PV) property with a high open-circuit voltage of 740mV has been reached for the cell, which is higher than that of solar cells fabricated with CuO-based planner structure.